Molecular Flow Module

In an ion implanter, the average number density of outgassing molecules along the beam path is used as a figure of merit to evaluate the design. It must be computed as a function of wafer angle, with rotation about one axis.
In an ion implanter, the average number density of outgassing molecules along the beam path is used as a figure of merit to evaluate the design. It must be computed as a function of wafer angle, with rotation about one axis.
The Molecular Flow Module is designed to offer previously unavailable simulation capabilities for the accurate modeling of low pressure, low velocity gas flows in complex geometries. It is ideal for the simulation of vacuum systems including those used in semiconductor processing, particle accelerators and mass spectrometers. Small channel applications (e.g. shale gas exploration and flow in nanoporous materials) can also be addressed. The Molecular Flow Module uses a fast angular coefficient method to simulate steady-state free molecular flows. You can model isothermal and nonisothermal molecular flows, and automatically calculate the heat flux contribution from the gas molecules. The discrete velocity method is also included in the module for the simulation of transitional flows.
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